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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates | SpringerLink
Nanomaterials | Free Full-Text | Room Temperature Ferromagnetism in InGaN Nanostructures Induced by Cr+ ion Implantation
Nanomaterials | Free Full-Text | Room Temperature Ferromagnetism in InGaN Nanostructures Induced by Cr+ ion Implantation
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
NEXAFS spectra of Mg- and Si-implanted GaN samples. The spectra are... | Download Scientific Diagram
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
PDF) TOF-SIMS analysis of InGaN/GaN for expected doping profiles
PDF) X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions | Andre Anders - Academia.edu
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates | SpringerLink
Materials | Free Full-Text | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Materials | Free Full-Text | Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN | Scientific.Net